Experimental Demonstration of Ferroelectric HfO₂ FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application

Abstract

We have experimentally demonstrated a ferroelectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FET with memory operation by introducing ultrathin IGZO as a channel material. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility with deposited channel material, nearly ideal subthreshold slope, and controllable memory characteristics with the use of back-end compatible process. These results are attributed to the properties of IGZO channel: junctionless FET operation, nearly-zero low-k interfacial layer on metal-oxide channel and good capping effect for realizing ferroelectric phase formation with HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . IGZO FeFET will open a new path for high-density memory application. Keywords: ferroelectric FET, HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , IGZO, memory.