Concepedia

Ferroelectric Random-access Memory

Ferroelectric Random-Access Memory is a non-volatile semiconductor memory device that stores data by utilizing the polarization properties of ferroelectric materials to enable fast, low-power read and write operations with high endurance.

423

Publications

25.9K

Citations

2K

Authors

399

Institutions

Publications per year

2017–2026

147

Variants

FeramFram

Parents

Publications

423

The Physics of Ferroelectric Memories

Orlando Auciello, J. F. Scott, R. Ramesh · Physics Today · 1998 · 1.3K citations

, , +9

Ferroelectric tunnel junctions for information storage and processing

Vincent Garcia, Manuel Bibès · Nature Communications · 2014 · 861 citations · Full text

, , +14

Overview of candidate device technologies for storage-class memory

Geoffrey W. Burr, B. N. Kurdi, J. C. Scott et al. · IBM Journal of Research and Development · 2008 · 680 citations

, , +17

Solid-state memories based on ferroelectric tunnel junctions

André Chanthbouala, Arnaud Crassous, Vincent Garcia et al. · Nature Nanotechnology · 2011 · 613 citations

, , +14

Towards the Development of Flexible Non‐Volatile Memories

Su‐Ting Han, Ye Zhou, Vellaisamy A. L. Roy · Advanced Materials · 2013 · 551 citations

, , +15

1–5 of 423

Authors

2K

  1. TM
    Thomas Mikolajick

    NaMLab (Germany), Germany

    21 publications · 2.6K citations

    20

    h-index

  2. US
    Uwe Schroeder

    NaMLab (Germany), Germany

    18 publications · 1.2K citations

    17

    h-index

  3. TA
    Tarek Ali

    Fraunhofer Institute for Photonic Microsystems, Germany

    16 publications · 739 citations

    14

    h-index

  4. TK
    Thomas Kämpfe

    Fraunhofer Institute for Photonic Microsystems, Germany

    16 publications · 648 citations

    14

    h-index

  5. KS
    Konrad Seidel

    Fraunhofer Institute for Photonic Microsystems, Germany

    16 publications · 671 citations

    14

    h-index

1–5 of 2K

Institutions

399

  1. NaMLab (Germany)

    Dresden, Germany

    20 h-index

    78 publications

    8.2K citations

  2. Technische Universität Dresden

    Dresden, Germany

    18 h-index

    29 publications

    2.2K citations

  3. Fraunhofer Institute for Photonic Microsystems

    Dresden, Germany

    18 h-index

    139 publications

    9.2K citations

  4. Samsung (South Korea)

    Seoul, South Korea

    14 h-index

    170 publications

    4.5K citations

  5. Texas Instruments (United States)

    Dallas, United States

    13 h-index

    138 publications

    5.3K citations

  6. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    48 publications

    9.8K citations

  7. Chinese Academy of Sciences

    Beijing, China

    12 h-index

    66 publications

    2.9K citations

  8. Tokyo Institute of Technology

    Tokyo, Japan

    11 h-index

    34 publications

    853 citations

1–8 of 399

Venues

  1. Applied Physics Letters

    30 publications · 1.3K citations

    23

    h-index

  2. IEEE Electron Device Letters

    21 publications · 1.2K citations

    19

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 29 publications · 902 citations

    17

    h-index

  4. Journal of Applied Physics

    21 publications · 956 citations

    15

    h-index

  5. IEEE Journal of Solid-State Circuits

    16 publications · 904 citations

    15

    h-index

1–5