Konrad Seidel

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Johannes Müller, T. S. Böscke, Stefan Müller et al. · 2013 · 490 citations

Natural Sciences, Electrical Engineering, Materials Science +13

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Tarek Ali, P. Polakowski, S. Riedel et al. · IEEE Transactions on Electron Devices · 2018 · 287 citations

Engineering, Electrical Engineering, Materials Science +13

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Johannes Müller, Ekaterina Yurchuk, T. Schlösser et al. · 2012 · 285 citations

Engineering, Materials Engineering, Materials Science +17

FeFET: A versatile CMOS compatible device with game-changing potential

Sven Beyer, Stefan Dünkel, Martin Trentzsch et al. · 2020 · 145 citations

Engineering, Computer Engineering, Electrical Engineering +15

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Tarek Ali, P. Polakowski, S. Riedel et al. · Applied Physics Letters · 2018 · 142 citations

Engineering, Materials Engineering, Materials Science +17