Konrad Seidel - Concepedia

Author

Konrad Seidel

Fraunhofer Institute for Photonic Microsystems ORCID

Also Known As

K. Seidel, K.H. Seidel, Konrad Seidel, Seidel, Konrad

182

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Photonic Microsystems Technische Universität Dresden GlobalFoundries (Germany)NaMLab (Germany)Complexity and Topology in Quantum Matter

About

Konrad Seidel is an author at Fraunhofer Institute for Photonic Microsystems specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	61	3.6K
2	Applied Physics	29	57	3.4K
3	Computer Engineering	16	19	696
4	Natural Sciences	1	1	116
5	Chemistry	1	1	19

Konrad Seidel

Publications

3.9K

Citations

H-Index

Page 1

	Year	Citations
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories Johannes Müller, T. S. Böscke, Stefan Müller, EngineeringResulting DevicesThin Film Process TechnologyNvm PropertiesMfm Capacitors	2013	476
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty Tarek Ali, P. Polakowski, S. Riedel, IEEE Transactions on Electron Devices Materials ScienceMagnetismElectrical EngineeringSemiconductor TechnologyEngineering	2018	278
Ferroelectricity in HfO<sub>2</sub> enables nonvolatile data storage in 28 nm HKMG Johannes Müller, Ekaterina Yurchuk, T. Schlösser, Non-volatile MemoryMultiferroicsElectrical EngineeringEngineeringFerroelectric Si	2012	276
FeFET: A versatile CMOS compatible device with game-changing potential Sven Beyer, Stefan Dünkel, Martin Trentzsch, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignFerroelectric Application	2020	141
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics Tarek Ali, P. Polakowski, S. Riedel, Applied Physics Letters EngineeringSilicon On InsulatorHafnium Zirconium OxideSemiconductor DeviceFerroelectric Application	2018	138
A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage Tarek Ali, P. Polakowski, Kati Kühnel, Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryMagnetism	2019	134
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices José Silva, Ruben Alcala, Uygar E. Avci, APL Materials Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringElectronic Materials	2023	119
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD Maximilian Lederer, Thomas Kämpfe, Ricardo Olivo, Applied Physics Letters EngineeringTexture MappingHfo2 FilmsMagnetismMultiferroics	2019	116
SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2 Jun Okuno, Takafumi Kunihiro, Kenta KONISHI, Magnetic PropertiesEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryFeram Memory Array	2020	114
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application Maximilian Lederer, Thomas Kämpfe, Tarek Ali, IEEE Transactions on Electron Devices EngineeringEmerging Memory TechnologyPhase Change MemoryNeurochipNeuromorphic Application	2021	112

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