T. Schlösser

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Johannes Müller, T. S. Böscke, Stefan Müller et al. · 2013 · 476 citations

Engineering, Resulting Devices, Thin Film Process Technology +18

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Johannes Müller, Ekaterina Yurchuk, T. Schlösser et al. · 2012 · 276 citations

Non-volatile Memory, Multiferroics, Electrical Engineering +15

Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors

Ekaterina Yurchuk, Johannes Müller, Jan Paul et al. · IEEE Transactions on Electron Devices · 2014 · 155 citations

Device Modeling, Electrical Engineering, Engineering +12

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Stefan Mueller, Johannes Müller, Raik Hoffmann et al. · IEEE Transactions on Electron Devices · 2013 · 135 citations

Sub Xmlns, Engineering, Ferroelectric Si +16

Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories

Ekaterina Yurchuk, Stefan Mueller, Dominik Martin et al. · 2014 · 109 citations

Non-volatile Memory, Cycling Degradation, Engineering +18