Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Johannes Müller, T. S. Böscke, Stefan Müller, +17

EngineeringResulting DevicesThin Film Process TechnologyNvm PropertiesMfm Capacitors +16

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Johannes Müller, Ekaterina Yurchuk, T. Schlösser, +14

Non-volatile MemoryMultiferroicsElectrical EngineeringEngineeringFerroelectric Si +13

Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors

Ekaterina Yurchuk, Johannes Müller, Jan Paul, +9

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringEngineeringFerroelectric ApplicationNanoelectronics +10

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Stefan Mueller, Johannes Müller, Raik Hoffmann, +9

IEEE Transactions on Electron Devices

Sub XmlnsEngineeringFerroelectric SiMfm CapacitorsMultiferroics +14

Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories

Ekaterina Yurchuk, Stefan Mueller, Dominik Martin, +11

Non-volatile MemoryCycling DegradationEngineeringFerroelectric Random-access MemoryScaling Properties +16

Internal structure of a Landau band induced by a lateral superlattice: a glimpse of Hofstadter's butterfly

T. Schlösser, K. Ensslin, J. P. Kotthaus, +1

Europhysics Letters (EPL)

Superconducting MaterialEngineeringMagnetic ResonanceTopological Quantum StateInternal Structure +19

Landau subbands generated by a lateral electrostatic superlattice - chasing the Hofstadter butterfly

T. Schlösser, K. Ensslin, J. P. Kotthaus, +1

Semiconductor Science and Technology

Superconducting MaterialEngineeringStrongly Correlated Electron SystemsLateral Electrostatic SuperlatticeQuantum Materials +17

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

Dominik Martin, Ekaterina Yurchuk, Stefan Müller, +9

Solid-State Electronics

Ferroelectric Si-doped Hfo2Electrical EngineeringFerroelasticsEngineeringFerroelectric Application +3

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

Ekaterina Yurchuk, Johannes Müller, Raik Hoffmann, +9

EngineeringNm Channel LengthEndurance PerformanceSilicon On InsulatorSemiconductor Device +14

Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond

Bernd Goebel, J. Lützen, D. Manger, +9

Non-volatile MemoryElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics +12