Raik Hoffmann

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Tarek Ali, P. Polakowski, S. Riedel et al. · IEEE Transactions on Electron Devices · 2018 · 287 citations

Engineering, Electrical Engineering, Materials Science +13

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Johannes Müller, Ekaterina Yurchuk, T. Schlösser et al. · 2012 · 285 citations

Engineering, Materials Engineering, Materials Science +17

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Johannes Müller, T. S. Böscke, U. Schröder et al. · IEEE Electron Device Letters · 2012 · 182 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors

Ekaterina Yurchuk, Johannes Müller, Jan Paul et al. · IEEE Transactions on Electron Devices · 2014 · 160 citations

Engineering, Electrical Engineering, Materials Science +17

FeFET: A versatile CMOS compatible device with game-changing potential

Sven Beyer, Stefan Dünkel, Martin Trentzsch et al. · 2020 · 145 citations

Engineering, Computer Engineering, Electrical Engineering +15