Jan Paul

Charge-Trapping Phenomena in HfO₂-Based FeFET-Type Nonvolatile Memories

Ekaterina Yurchuk, Johannes Müller, Stefan Müller et al. · IEEE Transactions on Electron Devices · 2016 · 356 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors

Ekaterina Yurchuk, Johannes Müller, Jan Paul et al. · IEEE Transactions on Electron Devices · 2014 · 160 citations

Engineering, Electrical Engineering, Materials Science +17

FeFET: A versatile CMOS compatible device with game-changing potential

Sven Beyer, Stefan Dünkel, Martin Trentzsch et al. · 2020 · 145 citations

Engineering, Computer Engineering, Electrical Engineering +15

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Stefan Mueller, Johannes Müller, Raik Hoffmann et al. · IEEE Transactions on Electron Devices · 2013 · 142 citations

Engineering, Electrical Engineering, Materials Science +14

Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories

Ekaterina Yurchuk, Stefan Mueller, Dominik Martin et al. · 2014 · 112 citations

Engineering, Electrical Engineering, Materials Science +17