Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors

Milan Pešić, Franz P. G. Fengler, Luca Larcher, +8

Advanced Functional Materials

Materials ScienceMultiferroicsEngineeringPhysicsCrystalline Defects +12

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

Stefan Dünkel, Martin Trentzsch, Ralf P. Richter, +20

EngineeringVlsi DesignEmerging Memory TechnologyFerroelectric Random-access MemoryNanoelectronics +14

Reconfigurable Silicon Nanowire Transistors

André Heinzig, Stefan Slesazeck, Franz Kreupl, +2

Nano Letters

The Past, the Present, and the Future of Ferroelectric Memories

Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck

IEEE Transactions on Electron Devices

EngineeringPhase Change MemoryMagnetismFerroelectric ApplicationNanoelectronics +14

Unveiling the double-well energy landscape in a ferroelectric layer

Michael Hoffmann, Franz P. G. Fengler, Melanie Herzig, +7

Nature

MultiferroicsEngineeringFerroelectric ApplicationDouble-well Energy LandscapeApplied Physics +2

Next generation ferroelectric materials for semiconductor process integration and their applications

Thomas Mikolajick, Stefan Slesazeck, Halid Mulaosmanovic, +5

Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringMultiferroicsAluminum Scandium +11

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Martin Trentzsch, S. Flachowsky, Ralf P. Richter, +14

Low-power ElectronicsLow PowerElectrical EngineeringEngineeringPower Device +11

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Halid Mulaosmanovic, J. Ocker, Stefan Müller, +7

ACS Applied Materials & Interfaces

EngineeringDomain LandscapePhase Change MemorySemiconductor DeviceMagnetism +14

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park, +1

MRS Bulletin

Electrical EngineeringFerroelectric Random-access MemoriesEngineeringFerroelectric ApplicationApplied Physics +6

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Johannes Müller, Ekaterina Yurchuk, T. Schlösser, +14

Non-volatile MemoryMultiferroicsElectrical EngineeringEngineeringFerroelectric Si +13