2017 · 533 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice ScalingEmbedded Memory BlocksMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsFerroelectric Field-effect TransistorsFerroelectric Random-access MemoryMemory Circuit DesignTemperature RetentionUltra-low-power Cmos
We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> At this point program/erase endurance cycles up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.
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22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 291 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +14