P. Moll

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

Stefan Dünkel, Martin Trentzsch, Ralf P. Richter et al. · 2017 · 522 citations

Engineering, Vlsi Design, Emerging Memory Technology +16

6F<sup>2</sup> buried wordline DRAM cell for 40nm and beyond

T. Schloesser, Frank Jakubowski, Johannes von Kluge et al. · 2008 · 46 citations

Electrical Engineering, Memory Architecture, Engineering +11

Etch Characteristics of Al[sub 2]O[sub 3] in ICP and MERIE Plasma Etchers

S. Tegen, P. Moll · Journal of The Electrochemical Society · 2005 · 27 citations

Materials Engineering, Materials Science, Chemical Engineering +15

Capacitance enhancement techniques for sub-100 nm trench DRAMs

M. Gutsche, H. Seidl, J. Luetzen et al. · 2002 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond

Bernd Goebel, J. Lützen, D. Manger et al. · 2003 · 20 citations

Non-volatile Memory, Electrical Engineering, Semiconductor Device +14