D. Manger

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

J. Böck, Klaus Aufinger, S. Boguth et al. · 2015 · 163 citations

Engineering, Electrical Engineering, Electronic Materials +14

SiGe BiCMOS Current Status and Future Trends in Europe

P. Chevalier, W. Liebl, H. Rücker et al. · 2018 · 79 citations

Engineering, Electrical Engineering, Microelectronics +16

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N. Menou, M. Popovici, Sergiu Clima et al. · Journal of Applied Physics · 2009 · 61 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Barrier Properties of Titanium Nitride Films Grown by Low Temperature Chemical Vapor Deposition from Titanium Tetraiodide

Cheryl Faltermeier, Cindy Goldberg, Michael Jones et al. · Journal of The Electrochemical Society · 1997 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17