Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Abstract

The characteristics of Stacked Nanosheet are investigated, focusing on channel geometry. For the first time, “narrow sheet effect” on carrier transport is observed. By comparing measured electron <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mu_{e})$</tex> and hole <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mu_{h})$</tex> mobilities, and the n-type/p-type opposite transconductance ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$gm$</tex> ) trends versus sheet width ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Wsheet$</tex> ), we show that the mobility dependency on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Wsheet$</tex> is attributed to reduced (100) plane conduction contribution as <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Wsheet$</tex> shrinks.