Reinaldo A. Vega

Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

Nattapol Damrongplasit, Changhwan Shin, Sung Hwan Kim et al. · IEEE Transactions on Electron Devices · 2011 · 173 citations

Random Dopant Fluctuations, Engineering, Vertical Tunneling +16

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 93 citations

Engineering, Semiconductor Device, Advanced Packaging (Semiconductors) +17

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Chun Wing Yeung, Jingyun Zhang, Robin Chao et al. · 2018 · 91 citations