Andrew Greene

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 93 citations

Engineering, Semiconductor Device, Advanced Packaging (Semiconductors) +17

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Chun Wing Yeung, Jingyun Zhang, Robin Chao et al. · 2018 · 91 citations

A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices

N. Loubet, Subhadeep Kal, Cheryl Alix et al. · 2019 · 81 citations

Engineering, Vlsi Design, Gate-all-around Nanosheet Devices +17