J. Zhang

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 97 citations

Engineering, Electrical Engineering, Materials Science +17

Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si_1-xGe_x Channel

Shinichi Mochizuki, Maruf Bhuiyan, Huimei Zhou et al. · 2020 · 46 citations

Engineering, Electrical Engineering, Materials Science +11

Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications

R. Bao, Kôji Watanabe, J. Zhang et al. · 2019 · 33 citations

Engineering, Electrical Engineering, High-performance Computing +17

Air spacer for 10nm FinFET CMOS and beyond

Kangguo Cheng, C. Surisetty, Raja Muthinti et al. · 2016 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16