A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar, +84

EngineeringElectron-beam LithographyFinfet TechnologyMechanical EngineeringWafer Scale Processing +16

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta, +81

EngineeringVlsi DesignFinfet TechnologyIntegrated CircuitsWafer Scale Processing +16

Tungsten and cobalt metallization: A material study for MOL local interconnects

V. Kamineni, M. Raymond, S. Siddiqui, +21

Mol Local InterconnectsEngineeringCvd W-based MetallizationWafer Scale ProcessingAdvanced Packaging (Semiconductors) +19

Cleaning Solutions for Ultrathin Co Barriers for Advanced Technology Nodes

S. R. Alety, Uma Rames Krishna Lagudu, R. Popuri, +3

ECS Journal of Solid State Science and Technology

Materials ScienceChemical EngineeringCorrosion ProtectionEngineeringCorrosion +13

Air spacer for 10nm FinFET CMOS and beyond

Kangguo Cheng, C. Surisetty, Raja Muthinti, +14

Low-power ElectronicsElectrical EngineeringFinfet CmosEngineeringVlsi Design +12

Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures

N. Breil, Adra Carr, Takashi Kuratomi, +17

EngineeringVlsi DesignPvd TiArea-enhanced ContactsComputer Architecture +16

Dissolution Inhibition in Cu-CMP Using Dodecyl-Benzene-Sulfonic Acid Surfactant with Oxalic Acid and Glycine as Complexing Agents

C. Surisetty, P.C. Goonetilleke, Dibakar Roy, +1

Journal of The Electrochemical Society

EngineeringMaterial Removal RatesSurfactantsGreen ChemistryChemistry +20

Oxalic-Acid-Based Slurries with Tunable Selectivity for Copper and Tantalum Removal in CMP

S. V. S. B. Janjam, C. Surisetty, S. Pandija, +2

Electrochemical and Solid-State Letters

EngineeringMaterial InnovationCu PlanarizationChemistryMineral Processing +16

Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

Kangguo Cheng, Soon‐Cheon Seo, J. Faltermeier, +38

Materials ScienceElectrical EngineeringEngineeringMicrofabricationNanoelectronics +9

Electrochemical investigation of the roles of oxyanions in chemical–mechanical planarization of tantalum and tantalum nitride

C. M. Sulyma, C.M. Pettit, C. Surisetty, +2

Journal of Applied Electrochemistry

Materials ScienceElectrochemical InvestigationChemical EngineeringEngineeringSurface Electrochemistry +5