R. Bao

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 93 citations

Engineering, Semiconductor Device, Advanced Packaging (Semiconductors) +17

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 64 citations

Engineering, Vlsi Design, Device Integration +16

Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications

R. Bao, Kôji Watanabe, J. Zhang et al. · 2019 · 29 citations

Low Power Applications, Nanosheet, Engineering +20