Three-dimensional integrated circuits

Anna W. Topol, Douglas Charles La Tulipe, Liang Shi, +8

IBM Journal of Research and Development

EngineeringDevice IntegrationStacked LayersComputer ArchitectureIntegrated Circuits +19

Silicon Device Scaling to the Sub-10-nm Regime

M. Ieong, B. Doris, J. Kedzierski, +2

Science

Device SpeedElectrical EngineeringSilicon Device ScalingEngineeringUltrathin Channel +11

FinFET design considerations based on 3-D simulation and analytical modeling

Guangsheng Pei, J. Kedzierski, Phil Oldiges, +2

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design +12

Extension and source/drain design for high-performance finFET devices

J. Kedzierski, M. Ieong, E. Nowak, +6

IEEE Transactions on Electron Devices

Low-power ElectronicsExtension ImplantsElectrical EngineeringEngineeringVlsi Design +12

Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

M. Ieong, P. M. Solomon, S.E. Laux, +2

Device ModelingElectrical EngineeringSchottky Barrier HeightEngineeringTunneling Microscopy +10

Germanium channel MOSFETs: Opportunities and challenges

Huiling Shang, Martin M. Frank, E. P. Gusev, +4

IBM Journal of Research and Development

Germanium Channel MosfetsElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +8

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky, +16

Electrical EngineeringEngineeringTechnology ScalingNanoelectronicsApplied Physics +6

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky, +21

Electrical EngineeringEngineeringTotal Gate SilicidationNanoelectronicsMetal-gate Finfet +7

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski, +7

IEEE Electron Device Letters

Electrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature Instability +7

Hybrid-orientation technology (HOT): opportunities and challenges

Min Yang, V. Chan, K. Chan, +9

IEEE Transactions on Electron Devices

EngineeringSilicon MosfetsSilicon On InsulatorAdvanced DesignSocial Sciences +17