Min Yang

Silicon Device Scaling to the Sub-10-nm Regime

M. Ieong, B. Doris, J. Kedzierski et al. · Science · 2004 · 573 citations

Engineering, Electrical Engineering, Materials Science +17

Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Massimo V. Fischetti, Zhibin Ren, P. M. Solomon et al. · Journal of Applied Physics · 2003 · 481 citations

Engineering, Materials Engineering, Materials Science +17

Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

T. Nirschl, C.-F. Chen, Eric Joseph et al. · 2007 · 274 citations

Engineering, Computer Engineering, Computer Science +7

Hybrid-orientation technology (HOT): opportunities and challenges

Min Yang, V. Chan, K. Chan et al. · IEEE Transactions on Electron Devices · 2006 · 169 citations

Engineering, Electrical Engineering, Materials Science +17

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

Min Yang, E. P. Gusev, M. Ieong et al. · IEEE Electron Device Letters · 2003 · 166 citations

Engineering, Electrical Engineering, Materials Science +17