Min Yang - Concepedia

Author

Min Yang

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

Guhyun Kim, M R Yang, M. K. Yang, M. Yang, M.K. Yang, Min Kyu Yang, Min K. Yang, Min Kyu Yang, Min YANG, Min Yang

173

Publications

4.8K

Citations

H-Index

125

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Huazhong University of Science and Technology DuPont (United States)Sahmyook University

About

Min Yang is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	54	4K
2	Applied Physics	23	37	2.9K
3	Biomedical Engineering	2	2	38
4	Education	1	1	62
5	Social Sciences	1	1	168

Min Yang

Publications

4.3K

Citations

H-Index

Page 1

	Year	Citations
Silicon Device Scaling to the Sub-10-nm Regime M. Ieong, B. Doris, J. Kedzierski, Science Device SpeedElectrical EngineeringSilicon Device ScalingEngineeringUltrathin Channel	2004	564
Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness Massimo V. Fischetti, Zhibin Ren, P. M. Solomon, Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringSi ThicknessPhysics	2003	475
Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory T. Nirschl, C.-F. Chen, Eric Joseph, Hardware SecurityWrite StrategiesElectrical EngineeringNovel Integration SchemeEngineering	2007	273
Hybrid-orientation technology (HOT): opportunities and challenges Min Yang, V. Chan, K. Chan, IEEE Transactions on Electron Devices EngineeringSilicon MosfetsSilicon On InsulatorAdvanced DesignSocial Sciences	2006	168
Non-Blocking 4x4 Electro-Optic Silicon Switch for On-Chip Photonic Networks Min Yang, William M. J. Green, Solomon Assefa, Optics Express PhotonicsElectrical EngineeringNon-blocking 4X4Unique Switch StatesEngineering	2010	164
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO<sub>2</sub> gate dielectrics Min Yang, E. P. Gusev, M. Ieong, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringCrystalline DefectsSilicon Crystal Orientation	2003	164
Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices Min Yang, Jae-Wan Park, Tae Kuk Ko, Applied Physics Letters Non-volatile MemoryEngineeringTi/mno2/pt DevicesPhase Change MemoryMemory Behavior	2009	162
A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications Solomon Assefa, Steven M. Shank, William H. Green, First Sub-100nm TechnologyOptical MaterialsEngineeringDevice IntegrationIntegrated Photonics	2012	159
A 25 Gbps silicon microring modulator based on an interleaved junction Jessie Rosenberg, W. M. J. Green, S. Assefa, Optics Express Drive VoltageEngineeringInterleaved JunctionOptical Transmission SystemDevice Integration	2012	130
CMOS Circuit Performance Enhancement by Surface Orientation Optimization L. Chang, M. Leong, Min Yang, IEEE Transactions on Electron Devices EngineeringVlsi DesignComputer ArchitectureInterconnect (Integrated Circuits)Physical Design (Electronics)	2004	128

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