Reika Ichihara

Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

Reika Ichihara, Kunifumi Suzuki, Haruka Kusai et al. · 2020 · 72 citations

Memory Operation, Electrical Engineering, Vth Window +12

Accurate Picture of Cycling Degradation in HfO₂-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis

Reika Ichihara, Y. Higashi, Kunifumi Suzuki et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 36 citations

Device Modeling, Electrical Engineering, Cycling Degradation +13

HfO₂-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

Masumi Saitoh, Reika Ichihara, M. Yamaguchi et al. · 2020 · 31 citations

Ai Applications, Engineering, Emerging Memory Technology +20

Impact of specific failure mechanisms on endurance improvement for HfO<inf>2</inf>-based ferroelectric tunnel junction memory

M. Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta et al. · 2018 · 16 citations

Engineering, Emerging Memory Technology, Ferroelectric Random-access Memory +16

High-Endurance FeFET with Metal-Doped Interfacial Layer for Controlled Charge Trapping and Stabilized Polarization

Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura et al. · 2023 · 14 citations