HfO₂-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

Abstract

We present the recent progress in HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectric FET (FeFET) and ferroelectric tunnel junction (FTJ) memory towards low-power and high-density storage and AI applications. A huge amount of interface trap charges coupled to spontaneous polarization significantly alters the operating model and improvement guideline of HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FeFET irrespective of elements doped into HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . Performance and reliability of in-memory reinforcement learning (RL) with HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FTJ array are enhanced by improving the characteristics of FTJ memory cells.