Masaru Kadoshima

Rutile-type TiO2 thin film for high-k gate insulator

Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto et al. · Thin Solid Films · 2003 · 243 citations

Engineering, Oxide Electronics, Applied Physics +3

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs

Masaru Kadoshima, Takeo Matsuki, Seiichi Miyazaki et al. · IEEE Electron Device Letters · 2009 · 63 citations

Low-power Electronics, Materials Science, Electrical Engineering +11

Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent

Masaru Kadoshima, Toshihide Nabatame, Masahiko Hiratani et al. · Japanese Journal of Applied Physics · 2002 · 30 citations

Engineering, Tetrahydrofuran Solvent, Chemistry +16

Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)₂ with Tetrahydrofuran Solvent

Toshihide Nabatame, Masahiko Hiratani, Masaru Kadoshima et al. · Japanese Journal of Applied Physics · 2000 · 30 citations

Materials Science, Ruthenium Films Prepared, Chemical Engineering +15

Partial silicides technology for tunable work function electrodes on high-k gate dielectrics - fermi level pinning controlled PtS/sub X/, for HfO/sub X/(N) pMOSFET

Toshihide Nabatame, Masaru Kadoshima, Kunihiko Iwamoto et al. · 2005 · 23 citations

Partial Silicides Technology, Electrical Engineering, Engineering +12