Rutile-type TiO2 thin film for high-k gate insulator

Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto, +4

Thin Solid Films

EngineeringOxide ElectronicsApplied PhysicsHigh-k Gate InsulatorThin Films +1

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs

Masaru Kadoshima, Takeo Matsuki, Seiichi Miyazaki, +6

IEEE Electron Device Letters

Low-power ElectronicsMaterials ScienceElectrical EngineeringEngineeringPoly-si/tin Gate Electrodes +9

Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent

Masaru Kadoshima, Toshihide Nabatame, Masahiko Hiratani, +3

Japanese Journal of Applied Physics

EngineeringTetrahydrofuran SolventChemistryChemical DepositionChemical Engineering +14

Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)₂ with Tetrahydrofuran Solvent

Toshihide Nabatame, Masahiko Hiratani, Masaru Kadoshima, +6

Japanese Journal of Applied Physics

Materials ScienceRuthenium Films PreparedChemical EngineeringRu Thin FilmsSio 2 +13

Partial silicides technology for tunable work function electrodes on high-k gate dielectrics - fermi level pinning controlled PtS/sub X/, for HfO/sub X/(N) pMOSFET

Toshihide Nabatame, Masaru Kadoshima, Kunihiko Iwamoto, +9

Partial Silicides TechnologyElectrical EngineeringEngineeringPhysicsNanoelectronics +10

Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf∕Al compositional ratio

Masaru Kadoshima, Arito Ogawa, Hiroyuki Ota, +8

Journal of Applied Physics

Materials ScienceAl ContentsElectrical EngineeringEngineeringAl Content +9

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology

Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, +22

Low-power ElectronicsPerpetuum Mobile 32BitElectrical EngineeringPower-aware ComputingThin Buried Oxide +10

Ultra-thin titanium oxide film with a rutile-type structure

Masahiko Hiratani, Masaru Kadoshima, Tatsumi Hirano, +5

Applied Surface Science

Materials ScienceMaterials EngineeringEngineeringRutile-type StructureOxide Electronics +3

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Akira Toriumi, Kunihiko Iwamoto, Hiroyuki Ota, +7

Microelectronic Engineering

Low-power ElectronicsElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics +5

Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Masaru Kadoshima, Koji Akiyama, Katsuhiko Yamamoto, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

SemiconductorsMaterials ScienceElectrical EngineeringEngineeringTan Films +13