Kunihiro Sakamoto

Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs

Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto et al. · IEEE Transactions on Electron Devices · 2005 · 130 citations

Device Modeling, Device Design Guidelines, Electrical Engineering +7

Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Yongxun Liu, Shinya Kijima, Etsuro Sugimata et al. · IEEE Transactions on Nanotechnology · 2006 · 115 citations

Materials Science, Tin Gate Electrode, Electrical Engineering +11

Atomically perfect bismuth lines on Si(001)

Kazushi Miki, David R. Bowler, James H. G. Owen et al. · Physical review. B, Condensed matter · 1999 · 99 citations

Materials Science, Engineering, Physics +13

Bismuth-induced structures on Si(001) surfaces

Kazushi Miki, James H. G. Owen, David R. Bowler et al. · Surface Science · 1999 · 98 citations

Engineering, Surface Science, Applied Physics +4

Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation–

Kunihiro Sakamoto, Ken'ichi Kyoya, Kazushi Miki et al. · Japanese Journal of Applied Physics · 1993 · 90 citations

Surface Characterization, Engineering, Surface Chemistry +14