Akihiko Furukawa - Concepedia

Author

Akihiko Furukawa

Mitsubishi Electric (Japan)

Also Known As

A Furukawa, A. Furukawa, Akihiko Furukawa, Furukawa, Akihiko

Publications

926

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Group (Japan)Toshiba (Japan)

About

Akihiko Furukawa is an author at Mitsubishi Electric (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	764
2	Applied Physics	8	8	513
3	Health Sciences	1	1	13
4	Natural Sciences	1	1	18
5	Biochemistry	1	1	18

Akihiko Furukawa

Publications

764

Citations

H-Index

Page 1

	Year	Citations
Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage Tatsuro Watahiki, Yohei Yuda, Akihiko Furukawa, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2017	214
Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation Kiyoshi Takeuchi, Takaaki Tatsumi, Akihiko Furukawa Low-power ElectronicsDevice ModelingElectrical EngineeringChannel EngineeringEngineering	2002	123
A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch Kazuya Yamamoto, T. Heima, Akihiko Furukawa, IEEE Journal of Solid-State Circuits Low-power ElectronicsExperimental ResultsElectrical EngineeringEngineeringVlsi Design	2001	108
Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa, Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsPin Schottky Diode	2017	66
21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs) T. Ohnakado, Satoshi Yamakawa, T. Murakami, IEEE Journal of Solid-State Circuits Electrical EngineeringDepletion-layer-extended TransistorsDepletion-layer-extended TransistorEngineeringRf Semiconductor	2004	64
A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer Shiro Manabe, Y. Mastunaga, Akihiko Furukawa, IEEE Transactions on Electron Devices Photonic SensorElectrical EngineeringPhotoelectric SensorEngineeringCalibration	1991	32
Isolation edge effect depending on gate length of MOSFETs with various isolation structures Toshiyuki Oishi, K. Shiozawa, Akihiko Furukawa, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringVarious Isolation StructuresEngineeringGate Length	2000	30
Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa, Japanese Journal of Applied Physics Wide-bandgap SemiconductorLeakage Current DensityElectrical EngineeringEngineeringMain Leakage Spot	2018	22
Palladium-catalyzed coupling reactions of bromobenzaldehydes with 3,4-di(tert-butyldimethylsilyloxy)-1-alkene to (3,4-dihydroxyalkenyl)benzaldehydes in the synthesis of lipoxin analogues Junzo Nokami, Akihiko Furukawa, Yoshiaki Okuda, Tetrahedron Letters Cross-coupling ReactionLipoxin AnaloguesEngineeringBiochemistryNatural Sciences	1998	18
Experimental demonstration of the active trench layout tuned 1200V CSTBT™ for lower dV/dt surge and turn-on switching loss Kazuya Konishi, Ryu Kamibaba, Mariko Umeyama, Electrical EngineeringGate CapacitanceEngineeringCell StructureHigh Voltage Engineering	2016	18

Page 1