Akihiko Furukawa

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Tatsuro Watahiki, Yohei Yuda, Akihiko Furukawa et al. · Applied Physics Letters · 2017 · 214 citations

Materials Science, Semiconductor Technology, Electrical Engineering +12

Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation

Kiyoshi Takeuchi, Takaaki Tatsumi, Akihiko Furukawa · 2002 · 123 citations

Low-power Electronics, Device Modeling, Electrical Engineering +13

A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch

Kazuya Yamamoto, T. Heima, Akihiko Furukawa et al. · IEEE Journal of Solid-State Circuits · 2001 · 108 citations

Low-power Electronics, Experimental Results, Electrical Engineering +9

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa et al. · Applied Physics Express · 2017 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

T. Ohnakado, Satoshi Yamakawa, T. Murakami et al. · IEEE Journal of Solid-State Circuits · 2004 · 64 citations

Electrical Engineering, Depletion-layer-extended Transistors, Depletion-layer-extended Transistor +9