Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Abstract

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (Wp) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with Wp of more than 6 µm can turn on at around 3 V. Increasing Wp can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.