Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Metal contacts to gallium nitride

James Foresi, T. D. Moustakas · Applied Physics Letters · 1993 · 330 citations

Engineering, Electrical Engineering, Materials Science +17

Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

S. Keller, Yifeng Wu, Giacinta Parish et al. · IEEE Transactions on Electron Devices · 2001 · 200 citations

Engineering, Electrical Engineering, Materials Science +17

Schottky contact and the thermal stability of Ni on <i>n</i>-type GaN

J. D. Guo, Fu‐Ming Pan, Ming Feng et al. · Journal of Applied Physics · 1996 · 174 citations

Engineering, Materials Engineering, Materials Science +17

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan, P. A. Houston, P. J. Parbrook et al. · Applied Physics Letters · 2002 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

The effect of thermal annealing on the Ni/Au contact of p-type GaN

Jinn‐Kong Sheu, Yan‐Kuin Su, W. C. Chen et al. · Journal of Applied Physics · 1998 · 90 citations

Engineering, Materials Engineering, Materials Science +17