The effect of thermal annealing on the Ni/Au contact of p-type GaN

Abstract

In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current–voltage (I–V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700 °C, the I–V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga–Ni and Ga–Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface.