Toshiyuki Oishi

High-mobility β-Ga₂O₃($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

Toshiyuki Oishi, Yuta Koga, Kazuya Harada et al. · Applied Physics Express · 2015 · 292 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Natsuko Miura, Takuma Nanjo, Muneyoshi Suita et al. · Solid-State Electronics · 2003 · 174 citations

Engineering, Electrical Engineering, Materials Science +14

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Takuma Nanjo, Akifumi Imai, Yosuke Suzuki et al. · IEEE Transactions on Electron Devices · 2013 · 133 citations

Engineering, Electrical Engineering, Materials Science +17

Carrier confinement observed at modulation-doped β-(Al<i> _x </i>Ga₁₋ <i> _x </i>)₂O₃/Ga₂O₃ heterojunction interface

Takayoshi Oshima, Yuji Katō, Naoto Kawano et al. · Applied Physics Express · 2017 · 127 citations

Engineering, Materials Engineering, Materials Science +17