Kazuya Harada

High-mobility β-Ga₂O₃($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

Toshiyuki Oishi, Yuta Koga, Kazuya Harada et al. · Applied Physics Express · 2015 · 286 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Conduction mechanism in highly doped β-Ga₂O₃ single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes

Toshiyuki Oishi, Kazuya Harada, Yuta Koga et al. · Japanese Journal of Applied Physics · 2016 · 80 citations

Synchrotron X-ray topography of dislocations in high-pressure high-temperature-grown single-crystal diamond with low dislocation density

Makoto Kasu, Ryuichi Murakami, Satoshi Masuya et al. · Applied Physics Express · 2014 · 32 citations

Engineering, Severe Plastic Deformation, Crystal Growth Technology +16

Study on capacitance–voltage characteristics of diamond field-effect transistors with NO₂ hole doping and Al₂O₃ gate insulator layer

Makoto Kasu, Kazuyuki Hirama, Kazuya Harada et al. · Japanese Journal of Applied Physics · 2016 · 23 citations

Semiconductor Technology, Electrical Engineering, Capacitance–voltage Characteristics +9