Conduction mechanism in highly doped β-Ga₂O₃ single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes

Abstract

Abstract Edge-defined fed-grown β-Ga 2 O 3 single crystals with high electron concentration of 3.9 × 10 18 cm −3 at 300 K were characterized by Hall effect measurement, and Schottky barrier diodes have been demonstrated. Electron mobility was as high as 74 cm 2 /(V·s) at 300 K regardless of the high doping concentration. The electron concentration did not change substantially in the low temperature below 160 K. This properties can be explained by the two-band model due to the inter-band conduction. On the Schottky barrier diodes, the rectification characteristics were clearly observed, and the current density of 96.8 A/cm 2 at the forward voltage of 1.6 V was obtained.