Satoshi Masuya

Realization of direct bonding of single crystal diamond and Si substrates

Jianbo Liang, Satoshi Masuya, Makoto Kasu et al. · Applied Physics Letters · 2017 · 73 citations · Full text

Engineering, Solid-state Chemistry, Chemistry +23

Observation of nanometer-sized crystalline grooves in as-grown β-Ga₂O₃ single crystals

Kenji Hanada, Tomoya Moribayashi, Takumi Uematsu et al. · Japanese Journal of Applied Physics · 2016 · 67 citations

Materials Science, Single Crystals, Engineering +15

Characterization of crystalline defects in <i>β</i>-Ga₂O₃ single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography

Satoshi Masuya, Kohei Sasaki, Akito Kuramata et al. · Japanese Journal of Applied Physics · 2019 · 57 citations

Engineering, Crystal Growth Technology, Synchrotron X-ray Topography +16

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya et al. · Applied Physics Letters · 2021 · 57 citations

Killer Defects, Semiconductor Technology, Electrical Engineering +13

Stability of diamond/Si bonding interface during device fabrication process

Jianbo Liang, Satoshi Masuya, Seongwoo Kim et al. · Applied Physics Express · 2018 · 45 citations · Full text