Sayleap Sdoeung

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya et al. · Applied Physics Letters · 2021 · 57 citations

Killer Defects, Semiconductor Technology, Electrical Engineering +13

Origin of reverse leakage current path in edge-defined film-fed growth (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki et al. · Applied Physics Letters · 2020 · 53 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki et al. · Applied Physics Express · 2021 · 36 citations

Semiconductors, Materials Science, Electrical Engineering +15

Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki et al. · Applied Physics Letters · 2022 · 24 citations

Semiconductor Technology, Electrical Engineering, Halide Vapor-phase Epitaxial +14

Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Express · 2022 · 20 citations

Semiconductors, Semiconductor Technology, Engineering +13