Katsumi Kawasaki

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya et al. · Applied Physics Letters · 2021 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Synthesis and characterization of Sr3TaGa3Si2O14 single crystals

Hiroaki Takeda, J. Sato, T. Kato et al. · Materials Research Bulletin · 2000 · 65 citations

Natural Sciences, Chemistry, Materials Science +12

Mechanism of the piezoelectricity of langasite based on the crystal structures

Tsuyoshi Iwataki, Hitoshi Ohsato, Kiyotaka Tanaka et al. · Journal of the European Ceramic Society · 2001 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +12

Origin of reverse leakage current path in edge-defined film-fed growth (001) <b> <i>β</i> </b>-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki et al. · Applied Physics Letters · 2020 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki et al. · Applied Physics Express · 2021 · 45 citations

Engineering, Electrical Engineering, Materials Science +17