Kazuyuki Hirama

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al₂O₃ Passivation Layer

Kazuyuki Hirama, Hisashi Sato, Y. Harada et al. · Japanese Journal of Applied Physics · 2012 · 180 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

Kazuyuki Hirama, H. Takayanagi, S. Yamauchi et al. · Applied Physics Letters · 2008 · 114 citations

Engineering, Transistor Performance, Semiconductor Device +17

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu · Applied Physics Letters · 2011 · 95 citations

Semiconductors, Low Thermal Resistance, Electrical Engineering +11

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties

Makoto Kasu, Hisashi Sato, Kazuyuki Hirama · Applied Physics Express · 2012 · 84 citations

Materials Science, Aluminium Nitride, Electrical Engineering +15

High-performance p-channel diamond MOSFETs with alumina gate insulator

Kazuyuki Hirama, H. Takayanagi, S. Yamauchi et al. · 2007 · 74 citations

Semiconductors, Materials Science, Electrical Engineering +11