Kazuyuki Hirama - Concepedia

Concepedia

Author

Kazuyuki Hirama

NTT Basic Research Laboratories ORCID

Also Known As

K. Hirama, Kazuyuki HIRAMA, Kazuyuki Hirama

76

Publications

1.4K

Citations

23

H-Index

29

Concepts

All Affiliations

NTT Basic Research Laboratories Waseda University Saga University National Institute of Advanced Industrial Science and Technology National Institute for Materials Science

KH

About

Kazuyuki Hirama is an author at NTT Basic Research Laboratories specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	26	1.3K
2	Applied Physics	22	26	1.3K
3	Electrical Engineering	18	19	1.1K
4	Materials Science	17	17	771
5	Materials Engineering	6	6	169

Kazuyuki Hirama

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28

Publications

1.4K

Citations

23

H-Index

	Year	Citations
Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al<sub>2</sub>O<sub>3</sub> Passivation Layer Kazuyuki Hirama, Hisashi Sato, Y. Harada, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEngineeringDiamond Field-effect TransistorsRf Semiconductor	2012	180
Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance Kazuyuki Hirama, H. Takayanagi, S. Yamauchi, Applied Physics Letters EngineeringTransistor PerformanceSemiconductor DeviceSurface Orientation DependenceNanoelectronics	2008	114
AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu Applied Physics Letters SemiconductorsLow Thermal ResistanceElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	95
Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties Makoto Kasu, Hisashi Sato, Kazuyuki Hirama Applied Physics Express Materials ScienceAluminium NitrideElectrical EngineeringHole ChannelEngineering	2012	84
High-performance p-channel diamond MOSFETs with alumina gate insulator Kazuyuki Hirama, H. Takayanagi, S. Yamauchi, SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2007	74
RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond Kazuyuki Hirama, Makoto Kasu, Yoshitaka Taniyasu IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied Physics	2012	71
High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface Kazuyuki Hirama, Kyosuke Tsuge, Syunsuke Sato, Applied Physics Express Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringSurface Science	2010	69
Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Kazuyuki Hirama, Hisashi Sato, Yuichi Harada, IEEE Electron Device Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesStable Operation	2012	64
Detection of Mismatched DNA on Partially Negatively Charged Diamond Surfaces by Optical and Potentiometric Methods Shoma Kuga, Jung-Hoon Yang, H. Takahashi, Journal of the American Chemical Society	2008	64
Ultrashallow TiC Source/Drain Contacts in Diamond MOSFETs Formed by Hydrogenation-Last Approach Yoshikatsu Jingu, Kazuyuki Hirama, Hiroshi Kawarada IEEE Transactions on Electron Devices Hydrogenation-last ApproachSemiconductor TechnologyElectrical EngineeringDiamond-like CarbonEngineering	2010	49

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