J. D. Guo

Schottky contact and the thermal stability of Ni on <i>n</i>-type GaN

J. D. Guo, Fu‐Ming Pan, Ming Feng et al. · Journal of Applied Physics · 1996 · 173 citations

Materials Science, Schottky Contact, Electrical Engineering +13

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

W. I. Lee, T. C. Huang, J. D. Guo et al. · Applied Physics Letters · 1995 · 118 citations

Wide-bandgap Semiconductor, Electrical Engineering, Deep Levels +7

A bilayer Ti/Ag ohmic contact for highly doped <i>n</i>-type GaN films

J. D. Guo, Chao-Ting Lin, Ming Feng et al. · Applied Physics Letters · 1996 · 85 citations

Semiconductors, Materials Science, Electrical Engineering +12

The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer

Chia-Pei Lin, Ming Feng, J. D. Guo et al. · Applied Physics Letters · 1996 · 65 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth and characterizations of GaN on SiC substrates with buffer layers

C. F. Lin, Hao Cheng, Ming Feng et al. · Journal of Applied Physics · 1997 · 32 citations

Materials Engineering, Oxide Heterostructures, Electrical Engineering +15