Concepedia

Transient Enhanced Diffusion

Transient Enhanced Diffusion is a phenomenon in semiconductor processing where the diffusion of dopant atoms is temporarily accelerated following ion implantation, due to the excess interstitials generated by the implantation damage, thereby enhancing dopant mobilization beyond intrinsic diffusion rates.

232

Publications

10.7K

Citations

614

Authors

160

Institutions

Publications per year

2017–2026

2

Variants

Ted

Parents

Publications

232

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

, , +17

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

, , +17

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

, , +17

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

, , +13

Transient enhanced diffusion of boron in Si

Sachin Jain, Wim Schoenmaker, Richard Lindsay et al. · Journal of Applied Physics · 2002 · 233 citations

, , +17

1–5 of 232

Authors

614

  1. DJ
    D. J. Eaglesham

    AT&T (United States), United States

    17 publications · 2.3K citations

    17

    h-index

  2. PS
    P.A. Stolk

    Philips (Netherlands), Netherlands

    17 publications · 2.4K citations

    16

    h-index

  3. KS
    K. S. Jones

    University of Florida, United States

    16 publications · 596 citations

    14

    h-index

  4. HG
    H.‐J. Gossmann

    AT&T (United States), United States

    13 publications · 1.5K citations

    13

    h-index

  5. JM
    J. M. Poate

    AT&T (United States), United States

    12 publications · 2.1K citations

    12

    h-index

1–5 of 614

Institutions

160

  1. University of Florida

    Gainesville, United States

    14 h-index

    52 publications

    1.7K citations

  2. Philips (Netherlands)

    Amsterdam, The Netherlands

    14 h-index

    71 publications

    5.4K citations

  3. Institute for Microelectronics and Microsystems

    Catania, Italy

    13 h-index

    30 publications

    703 citations

  4. Centre National de la Recherche Scientifique

    Paris, France

    13 h-index

    59 publications

    2.2K citations

  5. University of Catania

    Catania, Italy

    10 h-index

    27 publications

    820 citations

  6. Centre d’Élaboration de Matériaux et d’Études Structurales

    Toulouse, France

    10 h-index

    38 publications

    1.6K citations

  7. Stanford University

    Stanford, United States

    10 h-index

    26 publications

    1.4K citations

  8. University of Surrey

    Guildford, United Kingdom

    10 h-index

    22 publications

    691 citations

1–8 of 160

Venues

  1. Applied Physics Letters

    87 publications · 4.7K citations

    41

    h-index

  2. Journal of Applied Physics

    50 publications · 2.5K citations

    27

    h-index

  3. Journal of The Electrochemical Society

    JES · 13 publications · 802 citations

    13

    h-index

  4. 8

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 8 publications · 130 citations

    8

    h-index

1–5