M.D. Giles

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

Process Technology Variation

Kelin J. Kuhn, M.D. Giles, D. Becher et al. · IEEE Transactions on Electron Devices · 2011 · 365 citations

Engineering, Computer Engineering, Electrical Engineering +17

Analysis of graphene nanoribbons as a channel material for field-effect transistors

B. Obradovic, R. Kotlyar, Frederik Ole Heinz et al. · Applied Physics Letters · 2006 · 355 citations

Natural Sciences, Materials Engineering, Materials Science +17

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

Engineering, Materials Engineering, Materials Science +17

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

E.X. Wang, Philippe Matagne, L. Shifren et al. · IEEE Transactions on Electron Devices · 2006 · 143 citations

Engineering, Electrical Engineering, Materials Science +17