R. Kotlyar

Process Technology Variation

Kelin J. Kuhn, M.D. Giles, D. Becher et al. · IEEE Transactions on Electron Devices · 2011 · 360 citations

Law Technology Scaling, Engineering, Vlsi Design +19

Analysis of graphene nanoribbons as a channel material for field-effect transistors

B. Obradovic, R. Kotlyar, Frederik Ole Heinz et al. · Applied Physics Letters · 2006 · 352 citations

Graphene Nanomeshes, Electrical Engineering, Engineering +14

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 331 citations

Semiconductor Technology, V Heterojunction, Electrical Engineering +12

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

E.X. Wang, Philippe Matagne, L. Shifren et al. · IEEE Transactions on Electron Devices · 2006 · 143 citations

Electrical Engineering, Engineering, Physics +12

Scale invariance and dynamical correlations in growth models of molecular beam epitaxy

S. Das Sarma, C. J. Lanczycki, R. Kotlyar et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 1996 · 136 citations

Engineering, Dynamical Correlations, Crystal Growth Technology +19