R. Kotlyar

Process Technology Variation

Kelin J. Kuhn, M.D. Giles, D. Becher et al. · IEEE Transactions on Electron Devices · 2011 · 365 citations

Engineering, Computer Engineering, Electrical Engineering +17

Analysis of graphene nanoribbons as a channel material for field-effect transistors

B. Obradovic, R. Kotlyar, Frederik Ole Heinz et al. · Applied Physics Letters · 2006 · 355 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 333 citations

Engineering, Electrical Engineering, Materials Engineering +17

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

E.X. Wang, Philippe Matagne, L. Shifren et al. · IEEE Transactions on Electron Devices · 2006 · 143 citations

Engineering, Electrical Engineering, Materials Science +17

Assessment of room-temperature phonon-limited mobility in gated silicon nanowires

R. Kotlyar, B. Obradovic, Philippe Matagne et al. · Applied Physics Letters · 2004 · 136 citations

Engineering, Electrical Engineering, Physics +17