Kelin J. Kuhn - Concepedia

Author

Kelin J. Kuhn

Intel (United States)

Also Known As

K Kuhn, K. J. Kuhn, K. Kuhn, K.-J. Kuhn, K.J. Kuhn, Kelin J Kuhn, Kelin J. Kuhn, Kelin Kuhn, Kuhn, K. J., Kuhn, Kelin

106

Publications

5.7K

Citations

H-Index

Concepts

All Affiliations

Intel (United States)University of Washington University College Cork Intel (United Kingdom)

About

Kelin J. Kuhn is an author at Intel (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	49	5.3K
2	Applied Physics	25	37	3.9K
3	Natural Sciences	4	4	146
4	Chemistry	2	2	64
5	Social Sciences	1	1	360

Kelin J. Kuhn

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging K. Mistry, R. Chau, Changhwan Choi, Nm Logic TechnologyEngineeringVlsi DesignComputer ArchitectureHigh Volume	2007	825
Considerations for Ultimate CMOS Scaling Kelin J. Kuhn IEEE Transactions on Electron Devices Hardware SecurityElectrical EngineeringEngineeringVlsi DesignTechnology Scaling	2012	661
A 90-nm logic technology featuring strained-silicon Scott E. Thompson, M Armstrong, C. Auth, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentApplied Physics	2004	654
Process Technology Variation Kelin J. Kuhn, M.D. Giles, D. Becher, IEEE Transactions on Electron Devices Law Technology ScalingEngineeringVlsi DesignProcess VariationIndustrial Engineering	2011	360
Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm R. Rios, A. Cappellani, M Armstrong, IEEE Electron Device Letters Electrical EngineeringEngineeringApplied PhysicsJunctionless Accumulation-modeConventional Trigate Transistors	2011	334
The slab geometry laser - Part I: Theory J. Eggleston, Thomas J. Kane, Kelin J. Kuhn, IEEE Journal of Quantum Electronics PhotonicsEngineeringPhysicsOptical PropertiesGeometrical Optic	1984	300
Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS Kelin J. Kuhn EngineeringVlsi DesignSram MatchingElectronic DesignComputer Architecture	2007	234
45nm High-k + metal gate strain-enhanced transistors C. Auth, A. Cappellani, Jang‐Soo Chun, Materials EngineeringElectrical EngineeringEngineeringStress-enhancement TechniquesAdvanced Packaging (Semiconductors)	2008	204
Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in Al<i>x</i>Ga1−<i>x</i>As/GaAs/Al<i>x</i>Ga1−<i>x</i>As quantum wells Kelin J. Kuhn, Gita U. Iyengar, Sinclair S. Yee Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideCategoryquantum ElectronicsOptical MaterialsEngineering	1991	146
BTI reliability of 45 nm high-K + metal-gate process technology Sangwoo Pae, M. Agostinelli, M. Brazier, Materials EngineeringNmos BtiElectrical EngineeringEngineeringHardware Reliability	2008	130

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