R. Rios

High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2003 · 453 citations

Engineering, Electrical Engineering, Microelectronics +15

Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

R. Rios, A. Cappellani, M Armstrong et al. · IEEE Electron Device Letters · 2011 · 335 citations

Engineering, Electrical Engineering, Electronic Materials +10

Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout

Barry M. Doyle, B. I. Boyanov, Suman Datta et al. · 2004 · 219 citations

Engineering, Electrical Engineering, Microelectronics +15

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

R. Kotlyar, Uygar E. Avci, S. Cea et al. · Applied Physics Letters · 2013 · 93 citations

Engineering, Materials Engineering, Materials Science +17

PCIM: a physically based continuous short-channel IGFET model for circuit simulation

N.D. Arora, R. Rios, Cheng-Liang Huang et al. · IEEE Transactions on Electron Devices · 1994 · 93 citations

Engineering, Computer Engineering, Electrical Engineering +17