B. Chu-Kung

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 333 citations

Engineering, Electrical Engineering, Materials Engineering +17

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +13

Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications

M. Radosavljević, B. Chu-Kung, S. Corcoran et al. · 2009 · 136 citations

Engineering, Electrical Engineering, Materials Science +17

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

M. Radosavljević, G. Dewey, J. M. Fastenau et al. · 2010 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

R. Pillarisetty, B. Chu-Kung, S. Corcoran et al. · 2010 · 90 citations

Engineering, Electrical Engineering, Physics +17