R. Pillarisetty

Academic and industry research progress in germanium nanodevices

R. Pillarisetty · Nature · 2011 · 520 citations

Materials Science, Nanoscale Science, Nanoscale System +9

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 331 citations

Semiconductor Technology, V Heterojunction, Electrical Engineering +12

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Probing single electrons across 300-mm spin qubit wafers

Samuel F. Neyens, Otto Zietz, Thomas F. Watson et al. · Nature · 2024 · 112 citations · Full text

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

M. Radosavljević, T. Ashley, A. D. Andreev et al. · 2008 · 99 citations

Semiconductor Technology, Electrical Engineering, Logic Applications +11