A. D. Andreev

Theory of the electronic structure of GaN/AlN hexagonal quantum dots

A. D. Andreev, Eoin P. O’Reilly · Physical review. B, Condensed matter · 2000 · 343 citations

Engineering, Electronic Structure, Semiconductor Nanostructures +16

Strain distributions in quantum dots of arbitrary shape

A. D. Andreev, J.R. Downes, David A. Faux et al. · Journal of Applied Physics · 1999 · 214 citations

Materials Science, Engineering, Anisotropic Material +12

Mechanism of suppression of Auger recombination processes in type-II heterostructures

G. G. Zegrya, A. D. Andreev · Applied Physics Letters · 1995 · 152 citations

Optical Materials, Auger Recombination, Engineering +18

Calculation of electric field and optical transitions in InGaN∕GaN quantum wells

Ursula M. E. Christmas, A. D. Andreev, David A. Faux · Journal of Applied Physics · 2005 · 146 citations

Categoryquantum Electronics, Engineering, Multiple Quantum Wells +21

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 142 citations · Full text

Semiconductor Technology, Photonics, Gaas System +12