J.R. Downes - Concepedia

Author

J.R. Downes

University of Surrey

Also Known As

J DOWNES, J R Downes, J. R. Downes, J.R Downes, J.R. Downes, James Downes, James R. Downes

Publications

666

Citations

H-Index

Concepts

All Affiliations

University of Surrey Queen Mary University of London

About

J.R. Downes is an author at University of Surrey specializing in engineering, applied physics, and mechanics of materials.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	627
2	Applied Physics	10	10	615
3	Materials Science	5	5	400
4	Electrical Engineering	1	1	81
5	Materials Engineering	1	1	16

J.R. Downes

Publications

627

Citations

H-Index

Page 1

	Year	Citations
Strain distributions in quantum dots of arbitrary shape A. D. Andreev, J.R. Downes, David A. Faux, Journal of Applied Physics Materials ScienceEngineeringAnisotropic MaterialPhysicsStrain Localization	1999	214
A simple method for calculating strain distributions in quantum dot structures J.R. Downes, David A. Faux, Eoin P. O’Reilly Journal of Applied Physics EngineeringMechanical EngineeringSemiconductor NanostructuresQuantum ComputingMechanics	1997	107
Analytic solutions for strain distributions in quantum-wire structures David A. Faux, J.R. Downes, Eoin P. O’Reilly Journal of Applied Physics Wide-bandgap SemiconductorEngineeringQuantum-wire StructuresNanoelectronicsStressstrain Analysis	1997	81
Calculation of strain distributions in multiple-quantum-well strained-layer structures J.R. Downes, David A. Faux Journal of Applied Physics EngineeringStrained LayersPhysicsStrain LocalizationNanoelectronics	1995	44
A simple method for calculating strain distributions in quantum-wire structures David A. Faux, J.R. Downes, Eoin P. O’Reilly Journal of Applied Physics Cross SectionEngineeringMechanical EngineeringQuantum ComputingMechanics	1996	40
Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys Mark D. Frogley, J.R. Downes, D. J. Dunstan Physical review. B, Condensed matter Materials ScienceSemiconductorsIi-vi SemiconductorEpitaxial GrowthStrained Layers	2000	37
Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers A. Valster, A.T. Meney, J.R. Downes, IEEE Journal of Selected Topics in Quantum Electronics EngineeringLaser ApplicationsLaser MaterialHigh-power LasersOptical Amplifier	1997	28
The onset of plasticity in nanoscale contact loading N.B. Jayaweera, J.R. Downes, Mark D. Frogley, Proceedings of the Royal Society A Mathematical Physical and Engineering Sciences EngineeringSevere Plastic DeformationSoft MatterNanotribologyContact Mechanic	2003	26
Influence of strain relaxation on the electronic properties of buried quantum wells and wires J.R. Downes, David A. Faux, Eoin P. O’Reilly Materials Science and Engineering B Quantum ScienceBuried Quantum WellsEngineeringPhysicsQuantum Device	1995	22
Numerical calculation of equilibrium critical thickness in strained-layer epitaxy J.R. Downes, D. J. Dunstan, David A. Faux Semiconductor Science and Technology EngineeringMechanical EngineeringContinuum MechanicPure Edge CharacterElasticity (Physics)	1994	16

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