Applied Physics Letters · 1995 · 152 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap SemiconductorsAuger RecombinationExponential Function BehaviorHeterostructure DevicesHeterostructure OptoelectronicsHeterostructuresOptoelectronic PropertiesRecombination MechanismsType-ii Heterostructures
The mechanism of Auger recombination in type-II heterostructures is studied theoretically. It is shown that the Auger recombination rate is a power function of temperature rather than an exponential function as in bulk materials. The feasibility of suppression of the Auger recombination process in the type-II heterostructures is demonstrated. The possibility of controlling the Auger recombination rate is shown to be very important for development of optoelectronic devices with improved characteristics.