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Mechanism of suppression of Auger recombination processes in type-II heterostructures
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1995
Year
Optical MaterialsAuger RecombinationEngineeringOptoelectronic DevicesIi-vi SemiconductorElectronic DevicesNanoelectronicsExponential FunctionMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorElectrical EngineeringPhysicsOptoelectronic MaterialsAuger Recombination RateMicroelectronicsCategoryiii-v SemiconductorType-ii HeterostructuresApplied PhysicsMultilayer HeterostructuresOptoelectronics
The mechanism of Auger recombination in type-II heterostructures is studied theoretically. It is shown that the Auger recombination rate is a power function of temperature rather than an exponential function as in bulk materials. The feasibility of suppression of the Auger recombination process in the type-II heterostructures is demonstrated. The possibility of controlling the Auger recombination rate is shown to be very important for development of optoelectronic devices with improved characteristics.