Type-ii Heterostructures

Type-II Heterostructures is a class of semiconductor heterostructures in which the bandgap alignment between the constituent materials results in spatial separation of electrons and holes across the interface, leading to charge carriers being confined in different layers while enabling reduced recombination rates compared toType-I configurations.

621

Publications

31.8K

Citations

3.1K

Authors

768

Institutions

Publications per year

2017–2026

330

Variants

Type-ii Heterostructure

Authors

3.1K

  1. JL
    Jingbo Li

    Institute of Semiconductors, China

    11 publications · 1K citations

    11

    h-index

  2. MR
    Manijeh Razeghi

    Northwestern University, United States

    11 publications · 505 citations

    10

    h-index

  3. KD
    K. D. Moiseev

    Russian Academy of Sciences, Russia

    9 publications · 115 citations

    9

    h-index

  4. MP
    M. P. Mikhaĭlova

    Physico-Technical Institute, Russia

    9 publications · 115 citations

    9

    h-index

  5. LD
    Li Duan

    Chang'an University, China

    9 publications · 334 citations

    9

    h-index

1–5 of 3.1K

Venues

  1. Applied Physics Letters

    63 publications · 3.2K citations

    31

    h-index

  2. Journal of Applied Physics

    34 publications · 1.2K citations

    20

    h-index

  3. The Journal of Physical Chemistry C

    24 publications · 1.4K citations

    19

    h-index

  4. Physical Chemistry Chemical Physics

    PCCP · 24 publications · 885 citations

    19

    h-index

  5. ACS Applied Materials & Interfaces

    20 publications · 1.2K citations

    16

    h-index

1–5