K. D. Moiseev - Concepedia

Author

K. D. Moiseev

Also Known As

K D Moiseev, K. D. Moiseev, K. Moiseev, K.D Moiseev, K.D. Moiseev, Konstantin D. Moiseev, Konstantin Dmitrievich Moiseev, Konstantin Moiseev, Moiseev K. D., Moiseev, K. D.

151

Publications

822

Citations

H-Index

Concepts

All Affiliations

Russian Academy of Sciences Physico-Technical Institute Ioffe Institute International Laboratory of High Magnetic Fields and Low Temperatures FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic

About

K. D. Moiseev is an author at Russian Academy of Sciences specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	11	13	237
2	Engineering	10	12	216
3	Natural Sciences	2	2	26
4	Electrical Engineering	2	2	38
5	Chemistry	1	1	17

K. D. Moiseev

Publications

495

Citations

H-Index

Page 1

	Year	Citations
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions M. P. Mikhaĭlova, K. D. Moiseev, Yu. P. Yakovlev Semiconductor Science and Technology Wide-bandgap SemiconductorOptical MaterialsEngineeringEnergy Band DiagramOptoelectronic Devices	2004	65
InSb/InAs quantum dots grown by liquid phase epitaxy K. D. Moiseev, Ya. A. Parkhomenko, A. V. Ankudinov, Technical Physics Letters	2007	48
Discovery of III–V Semiconductors: Physical Properties and Application M. P. Mikhaĭlova, K. D. Moiseev, Yu. P. Yakovlev Semiconductors	2019	37
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate K. D. Moiseev, Ya. A. Parkhomenko, A. V. Ankudinov, Semiconductors	2009	31
A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy Sergei Ivanov, V. A. Kaygorodov, S. V. Sorokin, Applied Physics Letters EngineeringCdmgse/inas InterfaceLaser ApplicationsLaser MaterialOptoelectronic Devices	2003	22
Interface electroluminescence of confined carriers in type II broken-gap single heterojunction M. P. Mikhaĭlova, G. G. Zegrya, K. D. Moiseev, Solid-State Electronics Ii-vi SemiconductorPhotoluminescencePhysicsApplied PhysicsMultilayer Heterostructures	1996	21
Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy S. V. Ivanov, K. D. Moiseev, I. V. Sedova, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesChemistryHybrid Double Heterostructure	2001	17
Interface-induced phenomena in type II antimonide–arsenide heterostructures M. P. Mikhaĭlova, Yu. P. Yakovlev, N. L. Bazhenov, IEE Proceedings - Optoelectronics EngineeringOptoelectronic DevicesType IiSemiconductorsIi-vi Semiconductor	1998	16
Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system K. D. Moiseev, P. A. Dementev, V. V. Romanov, Journal of Crystal Growth Quantum ScienceEngineeringPhysicsQuantum DeviceApplied Physics	2010	14
Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy A. M. Litvak, M. P. Mikhaĭlova, K. D. Moiseev, Semiconductors	1997	13

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