Peter B. Griffin

Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

Natural Sciences, Materials Science, Physics +17

I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

Peter B. Griffin, J.D. Plummer · 2003 · 355 citations

Engineering, Electrical Engineering, Materials Science +12

Chemical and Biological Applications of Digital-Microfluidic Devices

Richard B. Fair, Andrey Khlystov, Tina D. Tailor et al. · IEEE Design & Test of Computers · 2007 · 324 citations · Full text

Engineering, Bioengineering, Biomedical Engineering +17

Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations

Peter B. Griffin, J.D. Plummer · IEEE Transactions on Electron Devices · 2004 · 310 citations

Engineering, Electrical Engineering, Microelectronics +14

Activation and diffusion studies of ion-implanted p and n dopants in germanium

Chi On Chui, Kailash Gopalakrishnan, Peter B. Griffin et al. · Applied Physics Letters · 2003 · 280 citations

Engineering, Materials Engineering, Materials Science +17