Konstantin Vassilevski

Author

Also Known As

K V Vassilevski, K Vassilevski, K. V. Vassilevski, K. Vassilevski, K.V Vassilevski, K.V. Vassilevski, Konstantin V. Vassilevski, Konstantin Vasilevskiy, Konstantin Vassilevski, Vassilevski, Konstantin

117

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Newcastle University Ioffe Institute Foundation for Research and Technology Hellas University of Nottingham University of Sheffield

About

Konstantin Vassilevski is an author at Newcastle University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	33	1.2K
2	Applied Physics	18	29	1.1K
3	Social Sciences	1	1	111
4	Biomedical Engineering	1	1	111
5	Chemical Engineering	1	1	30

Konstantin Vassilevski

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Prospects for SiC electronics and sensors Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski Materials Today SemiconductorsMaterials ScienceElectrical EngineeringSic DevicesEngineering	2008	233
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall, Journal of Applied Physics NanosheetEngineeringSemiconductorsN-type Silicon CarbideSilicene	2005	145
The sinusoidal probe: a new approach to improve electrode longevity Harbaljit S. Sohal, Andrew Jackson, Richard J. Jackson, Frontiers in Neuroengineering Medical ElectronicsEngineeringBiomedical EngineeringSocial SciencesImplanted Electrodes	2014	111
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN G. Salviati, M. Albrecht, C. Zanotti-Fregonara, physica status solidi (a) Wide-bandgap SemiconductorOptical MaterialsEngineeringCrystal DefectsExcitonic Transition	1999	87
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall, Semiconductor Science and Technology EngineeringOptoelectronic DevicesGraphite Capping LayerSilicon Carbide SurfacesGraphene-based Nano-antennas	2005	57
Physical Properties of Bulk GaN Crystals Grown by HVPE Yu. Melnik, Konstantin Vassilevski, A.I. Babanin, MRS Internet Journal of Nitride Semiconductor Research	1997	56
Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes Konstantin Vassilevski, Konstantinos Zekentes, L.P. Romanov IEEE Electron Device Letters EngineeringPower ElectronicsSemiconductor DeviceNanoelectronicsHomogeneous Avalanche Breakdown	2000	47
Semi-transparent SiC Schottky diodes for X-ray spectroscopy J.E. Lees, D J Bassford, G. W. Fraser, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment X-ray SpectroscopyEngineeringX-ray DiffractionApplied PhysicsCarbide	2007	42
4H-SiC IMPATT Diode Fabrication and Testing Konstantin Vassilevski, Konstantinos Zekentes, K. Tsagaraki, Materials science forum Electrical EngineeringEngineeringPower DevicePower Semiconductor DeviceMicroelectronics	2002	39
Properties of Free-Standing GaN Bulk Crystals Grown by HVPE Yu. Melnik, A. E. Nikolaev, Konstantin Vassilevski, MRS Proceedings Materials ScienceEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	1997	33

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