C. Zanotti-Fregonara

Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

G. Salviati, M. Albrecht, C. Zanotti-Fregonara et al. · physica status solidi (a) · 1999 · 87 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

M. Albrecht, Silke Christiansen, G. Salviati et al. · MRS Proceedings · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well <i>p</i>–<i>i</i>–<i>n</i> diodes

Paul Griffin, J. Barnes, K.W.J. Barnham et al. · Journal of Applied Physics · 1996 · 45 citations

Semiconductors, Dislocation Line Density, Electrical Engineering +15

Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

Silke Christiansen, M. Albrecht, W. Dorsch et al. · MRS Internet Journal of Nitride Semiconductor Research · 1996 · 25 citations · Full text

Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

Silke Christiansen, M. Albrecht, W. Dorsch et al. · Materials Science and Engineering B · 1997 · 16 citations

Materials Science, Wide-bandgap Semiconductor, Heteroepitaxial Wurtzite Gan +9