Dominique Planson - Concepedia

Author

Dominique Planson

Institut National des Sciences Appliquées de Lyon ORCID

Also Known As

A. Aouani, Chante, J. P., D Planson, D. Planson, Dheilly, Nicolas, Dominique Planson, Jens Peter Konrath, Planson, D, Planson, D., Planson, D. (Dominique)

345

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Institut National des Sciences Appliquées de Lyon Centre National de la Recherche Scientifique Laboratoire Ampère Université Claude Bernard Lyon 1 Université de Lyon

About

Dominique Planson is an author at Institut National des Sciences Appliquées de Lyon specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	30	1.2K
2	Applied Physics	15	22	658
3	Computer Engineering	2	2	31
4	Chemical Engineering	1	1	26
5	Chemistry	1	1	26

Dominique Planson

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
State of the art of high temperature power electronics Cyril Buttay, Dominique Planson, Bruno Allard, Materials Science and Engineering B High-power ElectronicsElectrical EngineeringEngineeringPower DevicePower Electronic Systems	2010	398
Extreme dielectric strength in boron doped homoepitaxial diamond Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot, Applied Physics Letters Materials ScienceExtreme Dielectric StrengthElectrical EngineeringDiamond-like CarbonCorresponding Electric Field	2010	150
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices Christophe Raynaud, Dominique Tournier, Hervé Morel, Diamond and Related Materials Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Temperature PerformancesPower Device	2009	102
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy N.S. Savkina, A. А. Lebedev, D. V. Davydov, Materials Science and Engineering B Materials EngineeringSublimation EpitaxyMaterials ScienceEngineeringApplied Physics	2000	44
Towards an airborne high temperature SiC inverter Dominique Bergogne, Hervé Morel, Dominique Planson, PESC record Electrical EngineeringSic DevicesEngineeringHigh Voltage EngineeringEnergy Efficiency	2008	44
The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC Farah Laariedh, M. Lazar, Pierre Crémillieu, Semiconductor Science and Technology	2013	36
Angle etch control for silicon carbide power devices Frédéric Lanois, P. Lassagne, Dominique Planson, Applied Physics Letters Electrical EngineeringAngle Etch ControlEngineeringPower DeviceSurface Science	1996	34
Ni–Al ohmic contact to p-type 4H-SiC Heu Vang, Mihai Lazar, Pierre Brosselard, Superlattices and Microstructures Materials ScienceSemiconductor TechnologyEngineeringNi–al Ohmic ContactApplied Physics	2006	34
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts Teng Zhang, Christophe Raynaud, Dominique Planson The European Physical Journal Applied Physics Materials EngineeringSemiconductor TechnologyElectrical EngineeringGaussian BarrierEngineering	2019	29
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor Frédéric Lanois, Dominique Planson, Marie‐Laure Locatelli, Journal of Electronic Materials Carbide PlasmaChemical EngineeringEngineeringApplied PhysicsPlasma Combustion	1999	26

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